3 - 321 sm-8 dual n-channel enhancement mode mosfets issue 1 - november 1995 partmarking detail C m4306n absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 2a pulsed drain current i dm 15 a gate-source voltage v gs 20 v operating and storage temperature range t j :t stg -55 to +150 c thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single die on both die on equally p tot 2.5 3.0 w w derate above 25c* any single die on both die on equally 20 24 mw/ c mw/ c thermal resistance - junction to ambient* any single die on both die on equally 50.0 41.6 c/ w c/ w * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. note: this data is derived from development material and does not necessarily mean that the device will go into production sm-8 (8 lead sot223) d 1 d 1 d 2 d 2 g 1 s 1 g 2 s 2 ZDM4306N
ZDM4306N electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 12 a v ds =10v, v gs =10v static drain-source on-state resistance (1) r ds(on) 0.22 0.32 0.33 0.45 w w v gs =10v,i d =3a v gs =5v, i d =1.5a forward transconductance (1)(2) g fs 700 ms v ds =25v,i d =3a input capacitance (2) c iss 350 pf common source output capacitance (2) c oss 140 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 30 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, v gen =10v, i d =3a rise time (2)(3) t r 25 ns turn-off delay time (2)(3) t d(off) 30 ns fall time (2)(3) t f 16 ns 1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r ds( o n) a n d v gs(th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r esi s ta n c e r d s ( o n ) gate threshold voltage v gs(th) i d= 3a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 1 2 7 6 5 3 10 9 8 10v 8v 9v 7v 5v 4v 6v 3.5v v gs= 20v 12v on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 10 100 3.5v 5v v gs =3v 6v 0.1 10 1.0 1 10v 3v 12 11 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss c iss c rss 01020 304050607080 0 300 200 100 400 500 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 3a 40v 60v 123 456789 101112 transconductance v drain current i d(on) - drain current (amps ) g f s -t ransconductance (s) 02 4 6810 v ds= 10v 0 1 2 4 3 5 12 14 16 18 20 8v ZDM4306N 3 - 322 3 - 323
ZDM4306N electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 12 a v ds =10v, v gs =10v static drain-source on-state resistance (1) r ds(on) 0.22 0.32 0.33 0.45 w w v gs =10v,i d =3a v gs =5v, i d =1.5a forward transconductance (1)(2) g fs 700 ms v ds =25v,i d =3a input capacitance (2) c iss 350 pf common source output capacitance (2) c oss 140 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 30 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, v gen =10v, i d =3a rise time (2)(3) t r 25 ns turn-off delay time (2)(3) t d(off) 30 ns fall time (2)(3) t f 16 ns 1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r ds( o n) a n d v gs(th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r esi s ta n c e r d s ( o n ) gate threshold voltage v gs(th) i d= 3a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 1 2 7 6 5 3 10 9 8 10v 8v 9v 7v 5v 4v 6v 3.5v v gs= 20v 12v on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 10 100 3.5v 5v v gs =3v 6v 0.1 10 1.0 1 10v 3v 12 11 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss c iss c rss 01020 304050607080 0 300 200 100 400 500 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 3a 40v 60v 123 456789 101112 transconductance v drain current i d(on) - drain current (amps ) g f s -t ransconductance (s) 02 4 6810 v ds= 10v 0 1 2 4 3 5 12 14 16 18 20 8v ZDM4306N 3 - 322 3 - 323
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